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Influence of CO.sub.2./sub. concentration on diamond film morphology in pulsed linear antenna microwave plasma CVD system
Domonkos, M. ; Ižák, Tibor ; Babchenko, Oleg ; Kromka, Alexander ; Hruška, Karel
The diamond films were deposited in a pulsed linear antenna microwave plasma system. The influence of CO2 addition into the standard CH4/H2 gas mixture on the diamond film morphology was investigated. The concentration of CO2 varied from 0% up to 80% in CO2/CH4/H2 gas mixture. The film morphology, the growth rate and the ratio of sp3/sp2 carbon bonds were investigated. It was found that increasing of CO2 concentration resulted in enhanced growth rate (from 20 up to 36 nm/h). However, at very high CO2 concentrations (>40%) dominates etching instead of growth process. Moreover, we found that increasing of CO2 enhances the diamond film quality.

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